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an AMP company
RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz
Features
N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
P&--4
DU28200M
v2.00 I
Absolute Maximum Ratings at 25C
Parameter I Symbol I Rating 1 Units 1
I Drain-SourceVoltage
Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance
(
V,, VOS `DS
(
65 20 20
I
v V A
I
1
P, TJ T STG
/
389 200 -65 to +150
1
W "C "C
1
Electrical Characteristics
Parameter
at 25C
Test Conditions
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1 Gate Threshold Voltage FonvardTransconductance Input Capacitance Output Capacitance ( Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance
* Per Side Specifications
BVDss `cm `GSS I vG,rr,, GM CISS COSS I CFSS
GP
65
5.0 5.0
V n-IA pA 1 v S pF pF 1 pF dB % -
V,,=O.O V, I,,=250 mA V,,=28.0 V, V,,=O.O V` v,,=20.0 v, V,stO.O v I v,,=~o.ov,
V,,=lO.O
1 2.0 2.5 -
1 6.0 225 200
1,,=500.0 mA
V, I,,=50 A, ~v,,=l .O V, 80~
I Pulse'
Vr,,=28.0 V, F=l .OMHz' V,,=28.0 V, F=l .O MHz' 1 V,,=28.0 V, F=l.O MHz' V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz I
1
13 55 -
(
40 lo:1
% VSWR-T
V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz
Subject to Change Without Notice.
RF MOSFET Power Transistor, 2OOW, 28V
DU28200M
v2.00
Typical Broadband Performance
Curves
GAIN vs FREQUENCY
30
V&3 V l,o=lOO mA
EFFICIENCY
W 6or
vs FREQUENCY
mA P,,=200 W
P,f200
VDD=28 V I,,=1000
10 -I 25
50 50
100 150
200
25
50
loo FRECXJENCY (MHz)
150
200
FREQUENCY
(MHz)
POWER OUTPUT
V,,=28
300
vs POWER
INPUT
V IDp=l 000 mA
100 MHz MHz
z 5
P 5 a cl0 ;
250
30
MHz
200 200
150 100
f
f
.
50 0 0.5 1 2 3 4 5
POWER INPUT (W)
RF MOSFET Power Transistor,
2OOW, 28V
DU28200M
v2.00
Typical Device Impedance
Frequency (MHz) 30 100 150 175 200
Z,N(OHMS) 2.7 - j 4.8 1.6 -j 3.0 1.5 -j 2.0 1.6 -j 1.0 1.8-j0.5 V,,=28 V, I,,=1000 mA, P0,~200 Watts
Z LOAD (OHMS) 7.2 - j 1.9 5.25 - j 1.4 5.0 - j 0.7 5.2 - j 0.6 5.5 - j 0.5 I I
Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD the series optimum equivalent load impedance as measured from drain to drain. is
RF Test Fixture
Specifications Subject to Change Without Notice.

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